XMax to acquire GaN power semiconductor developer Hexa Creation
Bitget2026/10/09 12:01XMax agreed to buy Hexa Creation in a deal for 100% of the U.S. company’s outstanding shares. Hexa Creation develops 1200V vertical GaN trench MOSFET technology aimed at AI data center power infrastructure and other high-voltage uses. Rationale centers on extending XMax’s AI strategy into power infrastructure as data centers move toward higher-voltage architectures such as 800VDC. Hexa Creation holds an exclusive license to patents and related IP from one of the largest U.S. public universities. Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. XMax Inc. published the original content used to generate this news brief via GlobeNewswire (Ref. ID: 202610090800PRIMZONEFULLFEED9842702) on October 09, 2026, and is solely responsible for the information contained therein.
- XMax agreed to buy Hexa Creation in a deal for 100% of the U.S. company’s outstanding shares.
- Hexa Creation develops 1200V vertical GaN trench MOSFET technology aimed at AI data center power infrastructure and other high-voltage uses.
- Rationale centers on extending XMax’s AI strategy into power infrastructure as data centers move toward higher-voltage architectures such as 800VDC.
- Hexa Creation holds an exclusive license to patents and related IP from one of the largest U.S. public universities.
Disclaimer: The content of this article solely reflects the author's opinion and does not represent the platform in any capacity. This article is not intended to serve as a reference for making investment decisions.
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