U.S. Army selects Navitas to develop next-generation 10 kV SiC IGBT technology
Bitget2026/09/28 20:15- Navitas won a U.S. Army-backed ALATTIS award to develop next-generation 10 kV silicon carbide power semiconductors.
- Program targets 10 kV SiC IGBTs with associated PiN diodes, extending its SiC roadmap beyond MOSFET products.
- Work will design, fabricate, test prototypes, aiming to validate a new domestic manufacturing process for ultra-high-voltage SiC devices.
- Effort builds on its GeneSiC portfolio spanning 650 V to 6.5 kV, anchored by its trench-assisted planar device architecture.
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