SK Hynix ramps up 1c DRAM production: yield rate rises to 80%, over half of capacity to transition within the year

Golden Longhui, April 9th — According to dealsite, SK Hynix is accelerating efforts to enhance the competitiveness of its 10-nanometer 6th generation (1c) DRAM, and investment in extreme ultraviolet (EUV) equipment for this process has increased about threefold compared to the original plan. Industry insiders revealed that SK Hynix is focusing on advancing 1c DRAM technology to be applied in 7th generation high bandwidth memory (HBM) HBM4E core chips, with plans to deliver samples this year. As HBM’s largest customer, NVIDIA, intends to launch its next-generation AI accelerator “Vera Rubin Ultra” equipped with HBM4E in the second half of next year, SK Hynix must speed up its R&D process. Insiders stated that the yield of SK Hynix's general-purpose 1c DRAM has now reached 80%. The company plans to convert more than half of its DRAM production capacity to 1c process products this year and expects to secure a capacity of about 190,000 units by the end of the year.